| PART |
Description |
Maker |
| LT3651-4.1 LT3651IUHE-4.2PBF |
Monolithic 4A High Voltage Monolithic 4A High Voltage
BATTERY CHARGE CONTROLLER, 1100 kHz SWITCHING FREQ-MAX, PQCC36
|
LINEAR TECHNOLOGY CORP
|
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4144AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3587 LT3587EUD-PBF LT3587EUD-TRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3512HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| NCP1052ST136T3G NCP1052 NCP1053 NCP1055 NCP1054 NC |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ONSEMI[ON Semiconductor]
|
